32 "Length dependence of vfb"),
34 "Width dependence of vfb"),
36 "Strong inversion surface potential "),
38 "Length dependence of phi"),
40 "Width dependence of phi"),
42 "Bulk effect coefficient 1"),
44 "Length dependence of k1"),
46 "Width dependence of k1"),
48 "Bulk effect coefficient 2"),
50 "Length dependence of k2"),
52 "Width dependence of k2"),
54 "VDS dependence of threshold voltage"),
56 "Length dependence of eta"),
58 "Width dependence of eta"),
60 "VBS dependence of eta"),
62 "Length dependence of x2e"),
64 "Width dependence of x2e"),
66 "VDS dependence of eta"),
68 "Length dependence of x3e"),
70 "Width dependence of x3e"),
72 "Channel length reduction in um"),
74 "Channel width reduction in um"),
76 "Zero field mobility at VDS=0 VGS=VTH"),
78 "VBS dependence of muz"),
80 "Length dependence of x2mz"),
82 "Width dependence of x2mz"),
84 "Mobility at VDS=VDD VGS=VTH, channel length modulation"),
86 "Length dependence of mus"),
88 "Width dependence of mus"),
90 "VBS dependence of mus"),
92 "Length dependence of x2ms"),
94 "Width dependence of x2ms"),
96 "VDS dependence of mus"),
98 "Length dependence of x3ms"),
100 "Width dependence of x3ms"),
102 "VGS dependence of mobility"),
104 "Length dependence of u0"),
106 "Width dependence of u0"),
108 "VBS dependence of u0"),
110 "Length dependence of x2u0"),
112 "Width dependence of x2u0"),
114 "VDS depence of mobility, velocity saturation"),
116 "Length dependence of u1"),
118 "Width dependence of u1"),
120 "VBS depence of u1"),
122 "Length depence of x2u1"),
124 "Width depence of x2u1"),
126 "VDS depence of u1"),
128 "Length dependence of x3u1"),
130 "Width depence of x3u1"),
132 "Subthreshold slope"),
134 "Length dependence of n0"),
136 "Width dependence of n0"),
138 "VBS dependence of subthreshold slope"),
140 "Length dependence of nb"),
142 "Width dependence of nb"),
144 "VDS dependence of subthreshold slope"),
146 "Length dependence of nd"),
148 "Width dependence of nd"),
150 "Gate oxide thickness in um"),
152 "Temperature in degree Celcius"),
154 "Supply voltage to specify mus"),
156 "Gate source overlap capacitance per unit channel width(m)"),
158 "Gate drain overlap capacitance per unit channel width(m)"),
160 "Gate bulk overlap capacitance per unit channel length(m)"),
162 "Flag for channel charge partitioning"),
164 "Source drain diffusion sheet resistance in ohm per square"),
166 "Source drain junction saturation current per unit area"),
168 "Source drain junction built in potential"),
170 "Source drain bottom junction capacitance grading coefficient"),
172 "Source drain side junction capacitance built in potential"),
174 "Source drain side junction capacitance grading coefficient"),
176 "Source drain bottom junction capacitance per unit area"),
178 "Source drain side junction capacitance per unit area"),
180 "Default width of source drain diffusion in um"),
182 "Length reduction of source drain diffusion"),
184 "Flag to indicate NMOS"),
186 "Flag to indicate PMOS"),
216 "Berkeley Short Channel IGFET Model",
#define BSIM1_MOD_MOBZEROBW
#define BSIM1_MOD_MOBVDDB0
#define BSIM1_MOD_MOBVDDW
#define BSIM1_MOD_DEFWIDTH
#define BSIM1_MOD_MOBVDDDW
#define BSIM1_MOD_MOBVDDD0
#define BSIM1_MOD_MOBZERO
#define BSIM1_MOD_MOBZEROBL
#define BSIM1_MOD_MOBVDDDL
static IFparm B1mPTable[]
#define BSIM1_MOD_MOBVDDBW
#define BSIM1_MOD_MOBVDD0
struct sBSIM1model B1model
static char * B1modNames[]
#define BSIM1_MOD_DELLENGTH
struct sBSIM1instance B1instance
#define BSIM1_MOD_MOBVDDL
#define BSIM1_MOD_MOBVDDBL
#define BSIM1_MOD_MOBZEROB0