48 double pbfact,pbfact1,pbo;
70 pbfact1= -2*vtnom*(1.5*log(fact1) +
CHARGE*tmp);
104 if (error)
return (error);
142 pbfact= -2*vt*(1.5*log(fact2) +
CHARGE*tmp);
144 tmp = 1/(ratio*sqrt(ratio));
151 tmp = (model->
MOSphi - pbfact1)/fact1;
152 here->
MOStPhi = fact2*tmp + pbfact;
169 tmp = exp(-egfet/vt + egfet1/vtnom);
struct sMOSmodel * MOSnextModel
double MOSgateBulkOverlapCap
MOSinstance * MOSinstances
double MOSbulkJctPotential
unsigned MOSoxideThicknessGiven
double MOStransconductance
unsigned MOSbulkCapFactorGiven
double MOSbulkJctBotGradingCoeff
double MOSsourcePerimeter
unsigned MOSsubstrateDopingGiven
unsigned MOSsurfaceMobilityGiven
double MOSbulkJctSideGradingCoeff
double MOSgateSourceOverlapCap
void MOSfd(MOSmodel *model, MOSinstance *here)
unsigned MOStransconductanceGiven
double MOSjctSatCurDensity
double MOSsubstrateDoping
double MOSsideWallCapFactor
static int mos_dopsetup()
unsigned MOSsideWallCapFactorGiven
double MOSgateSourceOverlapCapFactor
double MOSgateDrainOverlapCap
double MOSeffectiveLength
double MOSgateBulkOverlapCapFactor
double MOSsurfaceMobility
double MOSgateDrainOverlapCapFactor
double MOStTransconductance
struct sMOSinstance * MOSnextInstance
void MOSfs(MOSmodel *model, MOSinstance *here)