32 "Length dependence of vfb"),
34 "Width dependence of vfb"),
36 "Strong inversion surface potential "),
38 "Length dependence of phi"),
40 "Width dependence of phi"),
42 "Bulk effect coefficient 1"),
44 "Length dependence of k1"),
46 "Width dependence of k1"),
48 "Bulk effect coefficient 2"),
50 "Length dependence of k2"),
52 "Width dependence of k2"),
54 "VDS dependence of threshold voltage at VDD=0"),
56 "Length dependence of eta0"),
58 "Width dependence of eta0"),
60 "VBS dependence of eta"),
62 "Length dependence of etab"),
64 "Width dependence of etab"),
66 "Channel length reduction in um"),
68 "Channel width reduction in um"),
70 "Low-field mobility, at VDS=0 VGS=VTH"),
72 "VBS dependence of low-field mobility"),
74 "Length dependence of mu0b"),
76 "Width dependence of mu0b"),
78 "Mobility at VDS=VDD VGS=VTH"),
80 "Length dependence of mus0"),
82 "Width dependence of mus"),
84 "VBS dependence of mus"),
86 "Length dependence of musb"),
88 "Width dependence of musb"),
90 "VDS dependence of mu in tanh term"),
92 "Length dependence of mu20"),
94 "Width dependence of mu20"),
96 "VBS dependence of mu2"),
98 "Length dependence of mu2b"),
100 "Width dependence of mu2b"),
102 "VGS dependence of mu2"),
104 "Length dependence of mu2g"),
106 "Width dependence of mu2g"),
108 "VDS dependence of mu in linear term"),
110 "Length dependence of mu30"),
112 "Width dependence of mu30"),
114 "VBS dependence of mu3"),
116 "Length dependence of mu3b"),
118 "Width dependence of mu3b"),
120 "VGS dependence of mu3"),
122 "Length dependence of mu3g"),
124 "Width dependence of mu3g"),
126 "VDS dependence of mu in linear term"),
128 "Length dependence of mu40"),
130 "Width dependence of mu40"),
132 "VBS dependence of mu4"),
134 "Length dependence of mu4b"),
136 "Width dependence of mu4b"),
138 "VGS dependence of mu4"),
140 "Length dependence of mu4g"),
142 "Width dependence of mu4g"),
144 "Linear VGS dependence of mobility"),
146 "Length dependence of ua0"),
148 "Width dependence of ua0"),
150 "VBS dependence of ua"),
152 "Length dependence of uab"),
154 "Width dependence of uab"),
156 "Quadratic VGS dependence of mobility"),
158 "Length dependence of ub0"),
160 "Width dependence of ub0"),
162 "VBS dependence of ub"),
164 "Length dependence of ubb"),
166 "Width dependence of ubb"),
168 "VDS depence of mobility"),
170 "Length dependence of u10"),
172 "Width dependence of u10"),
174 "VBS depence of u1"),
176 "Length depence of u1b"),
178 "Width depence of u1b"),
180 "VDS depence of u1"),
182 "Length depence of u1d"),
184 "Width depence of u1d"),
186 "Subthreshold slope at VDS=0 VBS=0"),
188 "Length dependence of n0"),
190 "Width dependence of n0"),
192 "VBS dependence of n"),
194 "Length dependence of nb"),
196 "Width dependence of nb"),
198 "VDS dependence of n"),
200 "Length dependence of nd"),
202 "Width dependence of nd"),
204 "Threshold voltage offset AT VDS=0 VBS=0"),
206 "Length dependence of vof0"),
208 "Width dependence of vof0"),
210 "VBS dependence of vof"),
212 "Length dependence of vofb"),
214 "Width dependence of vofb"),
216 "VDS dependence of vof"),
218 "Length dependence of vofd"),
220 "Width dependence of vofd"),
222 "Pre-factor of hot-electron effect."),
224 "Length dependence of ai0"),
226 "Width dependence of ai0"),
228 "VBS dependence of ai"),
230 "Length dependence of aib"),
232 "Width dependence of aib"),
234 "Exponential factor of hot-electron effect."),
236 "Length dependence of bi0"),
238 "Width dependence of bi0"),
240 "VBS dependence of bi"),
242 "Length dependence of bib"),
244 "Width dependence of bib"),
246 "Upper bound of the cubic spline function."),
248 "Length dependence of vghigh"),
250 "Width dependence of vghigh"),
252 "Lower bound of the cubic spline function."),
254 "Length dependence of vglow"),
256 "Width dependence of vglow"),
258 "Gate oxide thickness in um"),
260 "Temperature in degree Celcius"),
268 "Gate source overlap capacitance per unit channel width(m)"),
270 "Gate drain overlap capacitance per unit channel width(m)"),
272 "Gate bulk overlap capacitance per unit channel length(m)"),
274 "Flag for channel charge partitioning"),
276 "Source drain diffusion sheet resistance in ohm per square"),
278 "Source drain junction saturation current per unit area"),
280 "Source drain junction built in potential"),
282 "Source drain bottom junction capacitance grading coefficient"),
284 "Source drain side junction capacitance built in potential"),
286 "Source drain side junction capacitance grading coefficient"),
288 "Source drain bottom junction capacitance per unit area"),
290 "Source drain side junction capacitance per unit area"),
292 "Default width of source drain diffusion in um"),
294 "Length reduction of source drain diffusion"),
296 "Flag to indicate NMOS"),
298 "Flag to indicate PMOS"),
328 "Berkeley Short Channel IGFET Model",
#define BSIM2_MOD_VGHIGHL
#define BSIM2_MOD_DELLENGTH
struct sBSIM2model B2model
#define BSIM2_MOD_VGHIGHW
struct sBSIM2instance B2instance
static char * B2modNames[]
#define BSIM2_MOD_DEFWIDTH
static IFparm B2mPTable[]
#define BSIM2_MOD_VGHIGH0